Magnetic tunnel junctions with AlN and AlNxOy barriers
Magnetic tunnel junctions with AlN and AlNxOy barriers
复制标题
具有 AlN 和 AlNxOy 势垒的磁性隧道结
DOI：
10.1063/1.1361046
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
B. Gurney
中科院分区：
文献类型：
--
作者：
M. Schwickert;J. Childress;R. Fontana;A. Kellock;P. Rice;M. Ho;T. Thompson;B. Gurney
诸如AlN的非氧化物隧道势垒对于磁性隧道结是有意义的，以避免磁性电极的氧化。我们研究了用于低阻磁性隧道结的AlN基薄势垒的制备和性能。提供了Ta（100 A）/PtMn（300 A）/CoFe 20（20 A-25 A）/阻挡层/CoFe 20（10-20 A）/NiFe 16（35-40 A）/Ta（100 A）形式的隧道阀的电子、磁性和结构数据，其中阻挡层由AlN、AlNxOy或AlN/AlOx组成，总厚度在8和15 A之间。溅射沉积隧道结，然后光刻图案化到2×2 μm2器件。 在室温下，在Ar溅射气体中，用含20%~ 35%N2的Al靶进行反应溅射沉积AlN，得到化学计量比的AlNx（x=0.50±0.05）。TEM分析表明，沉积的AlN阻挡层是结晶的。对于AlN势垒层和AlN随后自然O2氧化，我们获得了>10%的隧道磁电阻。
Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 A)/PtMn (300 A)/CoFe20 (20 A–25 A)/barrier/CoFe20 (10–20 A)/NiFe16 (35–40 A)/Ta (100 A) are presented, where the barrier consists of AlN, AlNxOy or AlN/AlOx with total thicknesses between 8 and 15 A. The tunnel junctions were sputter deposited and then lithographically patterned down to 2×2 μm2 devices. AlN was deposited by reactive sputtering from an Al target with 20%–35% N2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlNx (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O2 oxidation, we obtain tunnel magnetoresistance >10% with ...