Controllable wear behaviors of silicon nitride sliding against sintered polycrystalline diamond via altering humidity
Controllable wear behaviors of silicon nitride sliding against sintered polycrystalline diamond via altering humidity
复制标题
通过改变湿度控制氮化硅与烧结多晶金刚石滑动的磨损行为
DOI：
10.1111/jace.15421
复制
发表时间：
2018-06-01
影响因子：
3.9
通讯作者：
Wang, Chengbiao
中科院分区：
文献类型：
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作者：
Qin, Wenbo;Yue, Wen;Wang, Chengbiao
通过改变试验气氛中的相对湿度，研究了氮化硅（Si 3 N4）与烧结聚晶金刚石（PCD）摩擦副的摩擦学行为。结果表明，RH越高，Si_3N_4的磨损量越大，而PCD的磨损量几乎为零。特别是在85%RH的情况下，Si_3N_4的最大磨损量和最大的摩擦系数都达到了。此外，这项研究揭示了界面化学对潮湿条件下Si 3 N4磨损行为的影响。当水分子被引入到测试气氛中时，Si 3 N4表面上发生水解反应，在滑动界面上形成Si-O-Si键。在此过程中，Si-O-Si键断裂，形成Si-OH。X射线光电子能谱（XPS）结果表明，随着相对湿度的增加，Si-OH/Si-O和Si-N/Si-OH+Si-O键的比例增加。结果，Si 3 N4的磨损量显著增加。因此，由于水解和水合反应，Si 3 N4对烧结多晶金刚石的摩擦学行为可以通过改变RH水平来基本上控制。
The tribological behaviors of silicon nitride (Si3N4) sliding against sintered polycrystalline diamond (PCD) were investigated by varying the relative humidity (RH) in the testing atmosphere. The results indicated that higher RH corresponds to higher wear loss of Si3N4 and the wear loss of PCD almost fell close to zero. Especially in the case of 85% RH, both a maximum wear loss of Si3N4 and a maximum friction coefficient were achieved. In addition, this study revealed insights into the interface chemistry effects on the wear behavior of Si3N4 under humidity. When water molecules were introduced into the testing atmosphere, the hydrolysis reaction occurred on the Si3N4 surface with the formation of the Si-O-Si bond across the sliding interface. And then, the hydration reaction dominated the process, during which Si-OH was formed through the bond fracture of the Si-O-Si. The X-ray photoelectron spectroscopy results showed that the ratios of Si-OH/Si-O and Si-N/Si-OH+Si-O bonds increased as the relative RH levels increased. As a consequence, the wear loss of Si3N4 significantly increased. Thus, due to the hydrolysis and hydration reactions, the tribological behaviors of Si3N4 against sintered polycrystalline diamond can be essentially controlled via varying RH levels.