Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
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DOI：
10.1109/ted.2023.3270397
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发表时间：
2023-06
影响因子：
3.1
通讯作者：
Eunseon Yu;X. Lyu;M. Si;P. Ye;K. Roy
中科院分区：
文献类型：
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作者：
Eunseon Yu;X. Lyu;M. Si;P. Ye;K. Roy
对于铁电器件的低电压可靠工作，Hf${1}-{x}}$ZrxO2(HZO)厚度(${t}{\Text{HZO}}$)的定标是重要的。尽管伸缩很重要，但铁电退化和工艺热预算增加阻碍了进展。在这项工作中，我们建议使用界面层(IL)来缓解这些标度问题，并在Thin${t}_{\Text{HZO}}$中验证其有效性。我们的研究结果表明，在铁电HZO的临界温度以下，IL可以激活铁电。此外，我们报告了$2倍$极化改善，将工作电压从1.5V降低到1.2V，并通过$>；$10年的可靠性显著提高了耐久性，所有这些都是基于实验结果。我们相信，这项系统的工作为铁电器件中HZO的定标提供了一条简单而有效的途径。
For low-voltage reliable operation of ferroelectric devices, the scaling of Hf $_{{1}-{x}}$ ZrxO2 (HZO) thickness ( ${t}_{\text {HZO}}$ ) is important. Despite the importance of scaling, ferroelectricity degradation and increased process thermal budget hinder progress. In this work, we propose the use of an interfacial layer (IL) to mitigate these scaling issues and validate its effectiveness in thin ${t}_{\text {HZO}}$ . Our findings demonstrate that IL can activate ferroelectricity below the critical temperature of ferroelectric HZO. Moreover, we report $2\times $ polarization improvement, reduced operation voltage from 1.5 to 1.2 V, and substantially improved endurance with $>$ 10 years of reliability, all based on experimental results. We believe this systematic work offers a simple yet efficient route toward HZO scaling in ferroelectric devices.