Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si
Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si
复制标题
DOI：
10.1063/1.1767607
复制
发表时间：
2004-06
影响因子：
4
通讯作者：
K. Kita;K. Kyuno;A. Toriumi
中科院分区：
文献类型：
--
作者：
K. Kita;K. Kyuno;A. Toriumi
HfO2 films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO2 film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf–Ge–O ternary compound at the early stage of the film growth. This result shows that the HfO2∕Ge system has an advantage over the HfO2∕Si system from the viewpoint of further reduction of the gate oxide film thickness.
