Diffusion and channeling of low‐energy ions: The mechanism of ion damage
Diffusion and channeling of low‐energy ions: The mechanism of ion damage
复制标题
低能离子的扩散和沟道：离子损伤的机制
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
E. Hu
中科院分区：
文献类型：
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作者：
Ching;D. L. Green;E. Hu
为了理解低能离子诱导损伤的机理，建立了一个包括通道和扩散效应的简单模型。该模型与我们的实验数据吻合得更好，并得出离子轰击过程中缺陷的有效扩散系数为~ 3×10−15 cm2/s。数值结果支持了我们的实验数据，即即使在室温下，缺陷的扩散也在确定离子诱导损伤的分布中起着重要作用，并表明离子轰击过程中缺陷的扩散会有所增强。此外，由于大多数缺陷位于近表面区域（在表面的~ 50 A范围内），因此即使是适度的表面蚀刻去除也可以显着改变损伤轮廓。因此，在我们的模型中也考虑了表面去除，以寻找蚀刻速率对离子损伤分布的影响。
A simple model, including both channeling and diffusion effects, has been developed for the understanding of the mechanism of low‐energy ion‐induced damage. This model provided much better agreement with our experimental data, and yields a value for the effective diffusivity of defects during ion bombardment as ∼3×10−15 cm2/s. The numerical results support our experimental data that diffusion of defects, even at room temperature, plays an important role in determining the profile of ion‐induced damage and suggests that some enhancement of defect diffusion occurs during ion bombardment. In addition, since the majority of defects are located in the near‐surface region (within ∼50 A of the surface), even modest etch removal of the surface can dramatically alter the damage profile. Therefore, surface removal has also been considered in our model to find the influence of etch rate on the ion damage profile.