Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
复制标题
通过催化剂参考蚀刻对 4H-SiC (0001) 进行无损伤平坦化
DOI：
10.4028/www.scientific.net/msf.556-557.749
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
K. Yamauchi
中科院分区：
文献类型：
--
作者：
H. Hara;Y. Sano;H. Mimura;Kenta Arima;A. Kubota;K. Yagi;J. Murata;K. Yamauchi
我们报道了使用一种新的平坦化技术，即催化剂参考刻蚀(CARE)，实现了4H-SiC(0001)晶片的无损伤平坦化。配备了由催化剂制成的抛光垫的护理装置几乎与研磨装置相同。由于催化剂产生活性物种，只有当它们靠近催化剂表面时才被激活，因此可以在与催化剂表面接触的情况下化学去除碳化硅，压力明显低于传统抛光工艺。用光学干涉法和原子力显微镜对加工后的表面进行了观察。这些观测结果表明，表面粗糙度显著降低。在原子力显微镜图像中观察到阶梯状结构，台阶高度约为3み，对应于Si和C的一个双层厚度。为了评估经过护理处理的表面的结晶学性质，对表面进行了横截面透射电子显微镜观察。透射电子显微镜图像显示，与传统的化学机械抛光表面相比，表面具有更好的结晶学有序性。
We report the damage-free planarization of 4H-SiC (0001) wafers using a new planarization technique we named CAtalyst-Referred Etching (CARE). The CARE setup equipped with a polishing pad made of a catalyst is almost the same as a lapping setup. Since the catalyst generates reactive species that activate only when they are next to the catalyst surface, SiC can be chemically removed in contact with the catalyst surface with a pressure noticeably lower than that in a conventional polishing process. The processed surfaces were observed by optical interferometry and AFM. These observations presented a marked reduction in surface roughness. A step-terrace structure was observed with a step height of approximately 3み, corresponding to one-bilayer thickness of Si and C, in the AFM images. To estimate the crystallographic properties of the CARE-processed surface, the surfaces were observed by cross-sectional TEM. The TEM images showed that a more crystallographically well-ordered surface was realized in comparison with the conventional CMP-processed surface.