Nanobubble induced formation of quantum emitters in monolayer semiconductors
Nanobubble induced formation of quantum emitters in monolayer semiconductors
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DOI：
10.1088/2053-1583/aa629d
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发表时间：
2017-06-01
期刊：
影响因子：
5.5
通讯作者：
Strauf, Stefan
中科院分区：
文献类型：
--
作者：
Shepard, Gabriella D.;Ajayi, Obafunso A.;Strauf, Stefan
近年来，过渡金属二硫属化物（TMDC）中激子量子发射体的发现引起了人们对低维体系中局域激子的研究兴趣。关于先前归因于掺杂剂和/或缺陷以及应变电位的微观起源，仍然存在悬而未决的问题。在这里，我们表明，量子发射体可以故意诱导WSe 2和BN/WSe 2异质结构中的纳米气泡形成。原子力显微镜和高光谱光致发光图像的相关性表明，量子发射体和trion无序的起源是外在的，分别与10 nm高的纳米气泡和70 nm高的皱纹。我们进一步证明，“热冲压”的结果在没有0 D量子发射器和trion无序。所展示的技术是有用的纳米激光器和确定性形成的腔QED系统在单层材料的进步。
The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe2 and BN/WSe2 heterostructures. Correlations of atomic-force microscope and hyperspectral photoluminescence images reveal that the origin of quantum emitters and trion disorder is extrinsic and related to 10 nm tall nanobubbles and 70 nm tall wrinkles, respectively. We further demonstrate that 'hot stamping' results in the absence of 0D quantum emitters and trion disorder. The demonstrated technique is useful for advances in nanolasers and deterministic formation of cavity-QED systems in monolayer materials.