MIAMI: Microscope and ion accelerator for materials investigations
MIAMI: Microscope and ion accelerator for materials investigations
复制标题
DOI：
10.1116/1.3543707
复制
发表时间：
2011-03-01
影响因子：
2.9
通讯作者：
Donnelly, S. E.
中科院分区：
文献类型：
--
作者：
Hinks, J. A.;van den Berg, J. A.;Donnelly, S. E.
美国索尔福德大学建立了一台原位离子辐照透射电子显微镜。K.该系统由Colutron G-2离子源通过内部设计和构造的离子束传输系统连接到JEOL JEM-2000 FX TEM组成。该离子源可以为单电荷离子提供0.5至10 keV的离子能量，并且可以浮动至100 kV，以允许加速至更高的能量。离子种类从氢到氦可以产生的全范围的能量，允许与轻离子，如氦注入的调查，以及与重惰性或自离子取代照射的效果。以足够低的能量注入轻离子的能力，使得它们在TEM样品的厚度内停留，并且还以足以引起大量原子位移的能量用较重的物质照射，使得该设施非常适合于研究用于核环境的材料。TEM允许样品的内部微观结构在纳米尺度下成像。通过现场辐照，有可能观察到辐照过程中由于所研究系统内的竞争过程而可能发生的辐射损伤的动态演变。此外，实验变量，如温度，可以控制和维持整个照射和观察。这种能力的结合使人们能够理解潜在的原子过程，从而对控制材料对辐照的响应的基本物理学提供了宝贵的见解。详细的设计和规格的迈阿密设施沿着与硅和碳化硅的初步实验结果的例子。(C)2011年美国真空学会。[DOI：10.1116/1.3543707]
A transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U. K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3543707]