Patterned ion beam implantation of Co ions into a SiO2 thin film via ordered nanoporous alumina masks
Patterned ion beam implantation of Co ions into a SiO2 thin film via ordered nanoporous alumina masks
复制标题
通过有序纳米孔氧化铝掩模将 Co 离子图案化离子束注入 SiO2 薄膜
作者：
W. Guan;J. Ghatak;Yong Peng;N. Peng;C. Jeynes;B. Inkson;G. Möbus
采用孔径为125 nm的纳米多孔阳极氧化铝作为掩模，实现了190 keV Co+离子注入Si衬底上的SiO2薄膜的空间图形化。使用图案转移的周期性嵌入式Co区域的成功合成被证明是第一次使用截面（扫描）透射电子显微镜（TEM）结合分析TEM。发现注入的Co区域在由掩模给出的正确的相对横向周期处并且在约120 nm的深度处。
Spatially patterned ion beam implantation of 190 keV Co+ ions into a SiO2 thin film on a Si substrate has been achieved by using nanoporous anodic aluminum oxide with a pore diameter of 125 nm as a mask. The successful synthesis of periodic embedded Co regions using pattern transfer is demonstrated for the first time using cross-sectional (scanning) transmission electron microscopy (TEM) in combination with analytical TEM. Implanted Co regions are found at the correct relative lateral periodicity given by the mask and at a depth of about 120 nm.