Charge storage in nitrided nanocrystalline silicon dots
Charge storage in nitrided nanocrystalline silicon dots
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DOI：
10.1063/1.2115069
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发表时间：
2005-10
影响因子：
4
通讯作者：
Shaoyun Huang;S. Oda
中科院分区：
文献类型：
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作者：
Shaoyun Huang;S. Oda
氮化纳米晶硅（nc-Si）点被提出作为用于非易失性存储器件应用的存储节点的候选者，以充分利用硅量子点和氮化硅膜两者的优点。存储器节点中存储的电荷不仅在nc-Si点（电子离域态）中被识别，而且在nc-Si/氮化硅界面处的缺陷态（电子局域态）中被识别为电流-电压（I-V）谱。I-V特性的温度依赖性证明了组合系统中存储电荷的演变，并阐明了其存储机制。
Nitrided nanocrystalline silicon (nc-Si) dots are proposed to be a candidate of memory nodes for nonvolatile memory device applications to make good use of advantages of both silicon quantum dots and silicon nitride films. The stored charges in the memory nodes are identified not only in nc-Si dots (electron delocalized states) but also in defect states at the nc-Si/silicon-nitride interface (electron localized states) by current-voltage (I-V) spectrum. Temperature dependences of the I-V characteristics demonstrate an evolution of stored charges in the combined system and clarify its storage mechanisms.