GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE
GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE
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通过等离子体辅助 MBE 在 AlGaN 纳米柱中生长具有 AlN/GaN 布拉格反射器的 GaN/AlGaN 纳米腔
DOI：
10.1002/pssa.200460327
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
A. Carlo
中科院分区：
文献类型：
--
作者：
J. Ristić;E. Calleja;S. Fernández;A. Trampert;U. Jahn;K. Ploog;M. Povoloskyi;A. Carlo
通过等离子体辅助分子束外延（MBE）成功生长出具有不同铝（Al）组分的氮化铝镓（AlGaN）纳米柱，为实现包括氮化镓量子盘（QDss）在内的纳米异质结构开辟了道路。通过改变量子盘的厚度和/或势垒的铝组分，可以调节嵌入在AlGaN纳米柱中的量子盘的发光。然后，将这样的纳米异质结构封装在两个名义反射率分别为90%和50%的氮化铝/氮化镓分布式布拉格反射器（DBR）之间。与氮化铝镓/氮化镓叠层相比，选择氮化铝/氮化镓双层作为分布式布拉格反射器能够以显著更少的周期达到这些反射率值。所得到的纳米腔已通过阴极发光（CL）以及扫描和透射电子显微镜（SEM、TEM）进行了表征。阴极发光测量表明，纳米腔的发射非常接近目标值。透射电子显微镜数据表明，需要优化生长氮化铝柱状层的条件，以避免柱状纳米结构中的横向过度生长。（© 2005威利 - 维奇出版社有限责任公司，魏因海姆）
The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nano‐heterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their thickness and/or the Al composition of the barriers. Such a nano‐heterostructure was then enclosed between two AlN/GaN Distributed Bragg Reflectors (DBR), with nominal reflectivities of 90 and 50%. The choice of the AlN/GaN bilayers for the DBRs allowed to reach these reflectivity values with a significantly lower number of periods, as compared to the AlGaN/GaN stacks. The resulting nanocavity has been characterized by cathodoluminescence (CL), and Scanning and Transmission Electron Microscopy (SEM, TEM). CL measurements show that the emission from the nanocavity is quite close to the targeted value. TEM data points to the need of optimized conditions to grow AlN columnar layers in order to avoid the lateral overgrowth in the columnar nanostructure. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H