Fabrication of Ba-Ferrite Sputtered Films with Low Temperature Annealing and Their Magnetic Properties
Fabrication of Ba-Ferrite Sputtered Films with Low Temperature Annealing and Their Magnetic Properties
复制标题
低温退火Ba铁氧体溅射薄膜的制备及其磁性能
DOI：
10.3379/jmsjmag.21.s1_65
复制
发表时间：
1997
影响因子：
--
通讯作者：
N. Hiratsuka
中科院分区：
文献类型：
--
作者：
K. Kakizaki;N. Hiratsuka
采用射频二极管溅射法在石英衬底上制备了钡铁氧体薄膜。由于沉积膜的结晶性较差，因此在不同的空气温度下对薄膜进行后退火以诱导结晶。在高铁浓度（Fe/Ba bbb15）薄膜中，BaFe12O19相的结晶温度约为700℃。另一方面，在化学计量组成和高钡浓度（Fe/Ba>8.6）的薄膜中，BaFe12O19相的结晶温度约为650℃，低于高铁浓度薄膜的结晶温度。由于在高铁浓度薄膜中尖晶石相在低温下快速结晶，很难形成六方相。
Barium ferrite films were prepared by rf diode sputtering on a quartz substrate at room temperature. Because the as-deposited films had poor crystallization, the films were post-annealed at various temperatures in air to induce crystallization. In films with high iron concentrations (Fe/Ba>15), the crystallization temperature of the BaFe12O19 phase was about 700°C. On the other hand, in films with stoichiometry composition and high barium concentrations (Fe/Ba>8.6), the crystallization temperature of the BaFe12O19 phase was about 650°C, which was lower than that of films with high iron concentrations. Because in high iron concentration films spinel phase was quickly crystallized at low temperature, it was difficult to form hexagonal phase.