Evolution of a 2.05 eV AlGaInP top sub-cell for 5 and 6J-IMM applications
Evolution of a 2.05 eV AlGaInP top sub-cell for 5 and 6J-IMM applications
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用于 5 和 6J-IMM 应用的 2.05 eV AlGaInP 顶部子电池的演变
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
J. Mccarty
中科院分区：
文献类型：
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作者：
A. Cornfeld;P. Patel;J. Spann;D. Aiken;J. Mccarty
本文讨论了我们的2.05 eV的AlGaInP顶部子电池的演变。虽然由于电流密度容量不足，我们没有成功地将更优化的1.94 eV AlGaInP合金引入到我们的3或4J-IMM（倒置变质多结）结构的顶部子电池中，但是我们成功地开发了用于5或6 J-IMM应用的2.05 eV AlGaInP顶部子电池结构。为了达到所需的电流容量为11.3mA/cm ~ 2，我们制作了由1.91 eV的GaInP发射极和2.05 eV的AlGaInP基极组成的2.05 eV的异质结。结合在3 J-IMM同种型结构中的这种异质结顶部子电池表现出足够的Jsc，但降低了Voc= 1.466V，仅比1.91eV GaInP同质结子电池大43 mV。对我们的AlGaInP同质结的发射极的微小修改允许在具有足够电流密度和改进的Voc= 1.537V的5 J-IMM同种型结构中制造2.05eV的子电池。结合这些顶部子电池的5和6 J-IMM电池分别证明最大Voc = 4.839和5.195V。
This paper discusses the evolution of our 2.05 eV AlGaInP top sub-cell. Although we were not successful in introducing a more optimum 1.94 eV AlGaInP alloy into the top sub-cell of our 3 or 4J-IMM (inverted metamorphic multi-junction) structure because of insufficient current density capacity, we did successfully develop a 2.05 eV AlGaInP top sub-cell structure for 5 or 6J-IMM application. To achieve the desired current capacity of 11.3mA/cm2, we fabricated 2.05 eV hetero-junctions composed of a 1.91 eV GaInP emitter and a 2.05 eV AlGaInP base. Such a hetero-junction top sub-cell incorporated in a 3J-IMM iso-type structure exhibited sufficient Jsc but reduced Voc=1.466 V, being only 43 mV greater than the 1.91 eV GaInP homo-junction sub-cell. Minor modification to the emitter of our AlGaInP homo-junction permitted the fabrication of a 2.05 eV sub-cell in a 5J-IMM iso-type structure with sufficient current density and improved Voc=1.537 V. 5 and 6J-IMM cells incorporating these top sub-cells demonstrated maximum Vocs= 4.839 and 5.195 V, respectively.