Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT
Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT
复制标题
减少多台面通道 AlGaN/GaN HEMT 中的电流崩塌
DOI：
10.1002/pssc.201100301
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Tamotsu Hashizume
中科院分区：
文献类型：
--
作者：
Kota Ohi;Tamotsu Hashizume
研究了多台面通道 (MMC) AlGaN/GaN HEMT 的传输特性和非应力引起的电流崩塌特性。与传统平面 HEMT 相比，MMC 结构中的周围场效应导致阈值电压更浅，亚阈值斜率更小。施加断态偏置应力后，平面 HEMT 表现出显着的电流崩塌，包括导通电阻显着增加，增加了漏极应力偏置。另一方面，对于 MMC HEMT，即使在施加高漏极偏置应力后，我们观察到导通电阻 (RON) 的变化也较小。这表明MMC结构具有抵抗脱应力引起的电流崩塌的能力。在台面宽度（Wtop）小于100 nm的情况下，MMC HEMT的沟道电阻估计比断态应力引起的存取电阻的增加高出大约一个数量级。因此，MMC HEMT的操作可能对访问电阻的变化相当不敏感。 （© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Transport properties and off‐stress‐induced current collapse characteristics of the multi‐mesa‐channel (MMC) AlGaN/GaN HEMTs were investigated. The surrounding field effect in the MMC structure led to a shallower threshold voltage and a smaller subthreshold slope compared to those of the conventional planar HEMT. After applying off‐state bias stress, the planar HEMT showed remarkable current collapse, including significant increase in on‐resistance increasing the drain stress bias. On the other hand, for the MMC HEMT, we observed less change in on‐resistance (RON) even after the application of high drain bias stress. This shows that the MMC structure has resistance to the off‐stress‐induced current collapse. In the case of a mesa‐top width (Wtop) of less than 100 nm, the channel resistance of the MMC HEMT is estimated to be about one order of magnitude higher than the increase in access resistance induced by the off‐state stress. It is thus likely that the operation of the MMC HEMT is rather insensitive to change in access resistance. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)