Model for ferroelectric semiconductors thin films accounting for the space varying permittivity
Model for ferroelectric semiconductors thin films accounting for the space varying permittivity
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DOI：
10.1063/1.1834728
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发表时间：
2005-01
影响因子：
3.2
通讯作者：
L. Baudry;J. Tournier
中科院分区：
文献类型：
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作者：
L. Baudry;J. Tournier
降低铁电薄膜的厚度通常伴随着它们的铁电和介电性质的明显退化。低介电界面层的存在经常被用来解释这种行为。在铁电薄膜的建模方面，人们已经做了大量的工作，在两个低介电常数的层之间考虑铁电层。在这些模型中，有必要引入外部参数;介电常数和极化是膜内深度的阶跃函数。我们已经开发了一个模型的铁电半导体的非均匀朗道-德文希尔理论的基础上，包括表面效应。通过求解泊松方程确定局部电场，其中微分介电常数代替介电常数。我们发现，滞后回线的强烈影响的相关长度。这一点是讨论通过检查电场，极化，和微分介电常数剖面…
Reducing thickness of ferroelectric films typically comes with an apparent degradation of their ferroelectric and dielectric properties. The existence of low-dielectric interfacial layers is often invoked to explain such behaviors. Much work has been done on modeling ferroelectric thin films by considering a ferroelectric layer between two layers with low dielectric constant. In these models it is necessary to introduce extrinsic parameters; the dielectric constant and the polarization are step functions of the depth inside the film. We have developed a model for ferroelectric semiconductors based on the inhomogeneous Landau–Devonshire theory, including surface effects. The local electric field is determined by solving Poisson’s equation in which a differential permittivity replaces the dielectric constant. We have found that the hysteresis loops were strongly influenced by the correlation length. That point is discussed by examining the electric field, polarization, and differential permittivity profile ...