Power gating of VLSI circuits using MEMS switches in low power applications
Power gating of VLSI circuits using MEMS switches in low power applications
复制标题
在低功耗应用中使用 MEMS 开关的 VLSI 电路的电源门控
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Anis
中科院分区：
文献类型：
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作者：
Hosam Shobak;M. Ghoneim;Nawal El Boghdady;S. Halawa;Sophinese Iskander;M. Anis
功耗对VLSI设计者提出了很大的挑战。随着工艺规模的不断缩小，芯片的总功耗主要由漏电功耗构成。本文提出将定制设计的MEMS开关与功率门VLSI电路相结合，从而在兼顾性能和可靠性的同时有效地降低漏电功耗。所设计的微电子机械系统开关具有0.1876？导通电阻，需要4.5 V才能开关。由于采用了这种新的功率门控技术，备用漏电功率降低了99%，节能33.3%。最后研究了浪涌电流和接地反弹噪声可能产生的影响。这些发现为电池供电的系统提供了更长的运行时间，其特点是待机时间较长。
Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods.