Investigation of low injection effects using the local ideality factor obtained from effective lifetime measurements
Investigation of low injection effects using the local ideality factor obtained from effective lifetime measurements
复制标题
使用从有效寿命测量获得的局部理想因子研究低注入效应
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
K. McIntosh
中科院分区：
文献类型：
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作者：
Z. Hameiri;Fa‐Jun Ma;K. McIntosh
由氮化硅钝化的p型硅晶片和由氧化铝钝化的n型硅晶片的有效少数载流子寿命通常随着过量载流子浓度的降低而显著降低。人们提出了几种理论来解释这种效应。主要的是不对称的载流子寿命，表面损伤区域内的高复合，和边缘复合。由于在某些情况下，有效寿命测量可以很好地拟合所有这些效应，因此确定它们中的哪一个限制了特定晶片的低注入性能是具有挑战性的。这项研究表明，虽然这些机制影响的方式是难以区分的寿命，他们有一个显着不同的影响所产生的注射依赖的局部理想因子。因此，建议可以使用注射依赖的局部理想因子来区分这些机制。
The effective minority carrier lifetime of p-type silicon wafers passivated by silicon nitride and of n-type silicon wafers passivated by aluminum oxide often decreases significantly as the excess carrier concentration decreases. Several theories have been postulated to explain this effect. The main ones are asymmetric carrier lifetimes, high recombination within a surface damage region, and edge recombination. As in some cases the effective lifetime measurements can be fitted quite well by all these effects, it is challenging to determine which of them limits the low injection performance of a specific wafer. This study demonstrates that although these mechanisms affect the lifetime in ways that are difficult to be distinguished, they have a significantly different influence on the resulting injection-dependent local ideality factor. It is therefore suggested that the injection dependent local ideality factor can be used to distinguish between these mechanisms.