Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses
Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses
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DOI：
10.1002/pssr.201004421
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai
中科院分区：
文献类型：
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作者：
Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai
我们已经研究了两个AlGaN/GaN异质结构中的电子深能级，具有不同的电流崩溃在1150和1100 °C下生长的光电容光谱技术，使用肖特基势垒二极管。三个特定的深能级位于导带以下的2.07，2.80，和2.323 eV被发现是显着增强严重的电流崩溃，在合理的协议与光致发光和电容-电压特性。这些能级可能源于Ga空位和残留的C杂质，并且可能是AlGaN/GaN异质结构的电流崩塌现象的原因。（© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have investigated electronic deep levels in two AlGaN/GaN hetero‐structures with different current collapses grown at 1150 and 1100 °C by a photo‐capacitance spectroscopy technique, using Schottky barrier diodes. Three specific deep levels located at ∼2.07, ∼2.80, and ∼3.23 eV below the conduction band were found to be significantly enhanced for severe current collapse, being in reasonable agreement with photoluminescence and capacitance–voltage characteristics. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapse phenomena of the AlGaN/GaN hetero‐structures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)