Graphene single-electron transistors
Graphene single-electron transistors
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DOI：
10.1016/s1369-7021(10)70033-x
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发表时间：
2010-03-01
期刊：
影响因子：
24.2
通讯作者：
Ensslin, K.
中科院分区：
文献类型：
--
作者：
Ihn, T.;Guettinger, J.;Ensslin, K.
石墨烯是一种单层碳原子，形成了一种非常稳定、干净、几乎没有缺陷的二维晶体，被认为是一种新的革命性电子材料。这些希望主要依赖于石墨烯独特的能带结构特性。虽然电子主要生活在表面，但这种材料中的电子迁移率不会受到表面污染的严重影响，即使在室温下也惊人地高。与极高质量的半导体材料（如硅和砷化镓）相比，对石墨烯中电子输运的理解仍处于起步阶段。对单电子开关纳米晶体管的研究表明，为了实现石墨烯的梦想，材料科学家在未来需要解决许多尚未解决的问题。
Graphene, a single layer of carbon atoms forming a perfectly stable and clean two-dimensional crystal with very few defects, has been proclaimed to be a new revolutionary material for electronics. These hopes rest mainly on the unique band structure properties of graphene. Although living essentially on the surface, electron mobilities in this material do not suffer extensively from surface contaminations and are surprisingly high even at room temperature. In comparison to extremely high quality semiconducting materials, such as Silicon and GaAs, the understanding of electronic transport in graphene is still in its infancy. Research on nanoscale transistors switching with only a single electron exemplifies that there are a number of unresolved problems that material scientists should tackle in the future for making the graphene dreams come true.