Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy
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DOI：
10.1063/1.2126145
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发表时间：
2005-10-31
影响因子：
4
通讯作者：
Adesida, I
中科院分区：
文献类型：
--
作者：
Fang, ZQ;Look, DC;Adesida, I
Algan/gan/sic Schottky屏障二极管（SBD）（SBDS）具有和不具有SI3N4钝化的作用，其特征是温度依赖性电流 - 电压和电容 - 电容 - 电容 - 电容测量和深层短暂性光谱谱图（DLTS）。在未经宣传和钝化的SBD中都观察到了一个显性陷阱A（1），其活化能为1.0 eV和2x10（-12）cm（2）的明显捕获横截面。基于DLTS峰高的众所周知的对数依赖性，与线路缺陷相关的陷阱的填充脉冲宽度，A（1）通常在各种技术中生长的薄gan层中观察到，这与螺纹脱位有关。在高温下，DLTS信号有时会变为负，这可能是由于人造地表状态效应所致。 （c）2005年美国物理研究所。
AlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A(1), with activation energy of 1.0 eV and apparent capture cross section of 2x10(-12) cm(2), has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A(1), which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect. (C) 2005 American Institute of Physics.