Backend CAD flows for "restrictive design rules"

Backend CAD flows for "restrictive design rules"
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“限制性设计规则”的后端 CAD 流程

DOI:
10.1109/iccad.2004.1382674
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发表时间:
2004
期刊:
IEEE/ACM International Conference on Computer Aided Design, 2004. ICCAD-2004.
影响因子:
--
通讯作者:
G. Northrop
G. Northrop
中科院分区:
--
文献类型:
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作者:
M. Lavin;Fook;G. Northrop

文献摘要

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为了应对深亚波长技术(特别是130纳米及以下)的挑战,光刻技术越来越依赖于数据处理,如形状填充、光学接近校正和像altPSM这样的ret。对于新兴技术(65纳米及以下),这些技术的计算成本和复杂性本身就成为设计硅流的瓶颈。这激发了最近对限制性设计规则的呼吁,例如栅极形成多晶硅特征的固定宽度/间距/方向。我们一直在探索设计如何利用这些限制,并提出了一些初步的想法,即我们如何通过后tapout数据处理在整个设计流程的后端降低计算成本,同时提高结果的质量:OPC/RET算法的可靠性和制造产品模型的准确性。我们还相信,包括仿真和分析在内的基础技术可能适用于各种可制造性设计(DFM)方法。
To meet challenges of deep-subwavelength technologies (particularly 130 nm and following), lithography has come to rely increasingly on data processes such as shape fill, optical proximity correction, and RETs like altPSM. For emerging technologies (65 nm and following) the computation cost and complexity of these techniques are themselves becoming bottlenecks in the design-silicon flow. This has motivated the recent calls for restrictive design rules such as fixed width/pitch/orientation of gate-forming polysilicon features. We have been exploring how design might take advantage of these restrictions, and present some preliminary ideas for how we might reduce the computational cost throughout the back end of the design flow through the post-tapeout data processes while improving quality of results: the reliability of OPC/RET algorithms and the accuracy of models of manufactured products. We also believe that the underlying technology, including simulation and analysis, may be applicable to a variety of approaches to design for manufacturability (DFM).