Ultra high aspect-ratio and thick deep silicon etching (UDRIE)
Ultra high aspect-ratio and thick deep silicon etching (UDRIE)
复制标题
超高深宽比厚硅深蚀刻（UDRIE）
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
K. Najafi
中科院分区：
文献类型：
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作者：
Y. Tang;A. Sandoughsaz;K. Najafi
我们报道了一种先进的深反应离子刻蚀工艺，专门用于在厚(>；500μΉ)硅片中刻蚀超深结构，具有高纵横比和直的侧壁，覆盖了广泛的特征尺寸和图案。这是通过在整个刻蚀过程中提高关键工艺参数来实现的。在1 mm厚的硅片上刻蚀600-800μm深的沟槽，宽度小至20-40μm，并有望用更厚和/或更高选择性的掩模材料刻蚀通过1 mm的硅片。我们已经生产了深>；500μm的孔，孔直径小到25μm，可能有10-15μm直径的孔。这种超深硅刻蚀工艺将有利于集成电路集成和新兴的微米和毫米级MEMS应用，这些应用需要高分辨率的深DRIE。
We report an advanced deep-reactive-ion-etching (DRIE) process developed specifically for etching ultra-deep structures in thick (>500μΉ) silicon wafers with high aspect-ratio and straight sidewalls across a wide range of feature sizes and patterns. This is achieved by ramping critical process parameters throughout the etching duration. 600–800μm deep trenches with widths as small as 20–40μm are etched in 1mm-thick silicon wafer, and are expected to be etched through a 1mm wafer with thicker and/or higher selectivity masking materials. We have produced holes >500μm deep with hole diameters as small as 25μm, and potentially with 10–15μm diameter holes. This ultra-deep silicon etching process will benefit both IC integration and emerging MEMS applications at micrometer and millimeter scale that demand high-resolution deep DRIE.