Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
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1.3 μm InGaAlAs/InP 垂直腔表面发射激光器结构的表面光电压光谱和法向入射反射率表征
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
R. Stall
中科院分区：
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作者：
Ying;L. Malikova;F. Pollak;J. Debray;R. Hoffman;A. Amtout;R. Stall
我们使用表面光电压光谱 (SPS) 和法向入射反射率研究了 1.3 μm InGaAlAs/InP (001) 垂直腔表面发射激光器 (VCSEL) 结构。 SPS 测量是根据相对于法线 (0°–55°) 的入射角和温度 (300 K<T<420 K) 进行的。 SPS 光谱表现出重空穴激子跃迁和腔模式的基本传导，以及与反射镜堆叠相关的丰富干涉图案。讨论了 SPS 相对于其他研究 VCSEL 的方法（例如光反射和光电流光谱）的优点。该实验证明了 SPS 在表征这些器件结构方面具有巨大的潜力。
We have investigated a 1.3 μm InGaAlAs/InP (001) vertical-cavity surface-emitting laser (VCSEL) structure using surface photovoltage spectroscopy (SPS) and normal-incidence reflectivity. The SPS measurements were performed as a function of angle of incidence relative to the normal (0°–55°) and temperature (300 K<T<420 K). The SPS spectra exhibit both the fundamental conduction to heavy-hole excitonic transition and cavity mode plus a rich interference pattern related to the mirror stack. The advantages of SPS in relation to other methods to study VCSELs, such as photoreflectance and photocurrent spectroscopy, are discussed. This experiment demonstrates the considerable potential of SPS for the characterization of these device structures.