Screening effect and impurity scattering in monolayer graphene
Screening effect and impurity scattering in monolayer graphene
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DOI：
10.1143/jpsj.75.074716
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发表时间：
2006-07-01
影响因子：
1.7
通讯作者：
Ando, Tsuneya
中科院分区：
文献类型：
--
作者：
Ando, Tsuneya
在二维石墨中计算静态极化函数，并用于计算受带电杂质散射限制的电导率。的电导率增加成比例的电子浓度和迁移率保持独立的费米能量，定性与实验一致。与常规二维系统中的行为相反，在足够高的温度下，屏蔽与温度成比例地增加，导致迁移率与温度的平方成比例地增加。
The static polarization function is calculated in two-dimensional graphite and used for the calculation of the conductivity limited by charged-impurity scattering. The conductivity increases in proportion to the electron concentration and the mobility remains independent of the Fermi energy, in qualitative agreement with experiments. The screening increases in proportion to temperature at sufficiently high temperatures in contrast to the behavior in conventional two-dimensional systems, leading to the mobility increase proportional to the square of temperature.