Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes
Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes
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DOI：
10.1038/s41467-019-13293-0
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发表时间：
2019-11-20
影响因子：
16.6
通讯作者：
Xia, Zhiguo
中科院分区：
文献类型：
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作者：
Qiao, Jianwei;Zhou, Guojun;Xia, Zhiguo
近红外发光材料具有独特的光物理性质，使其成为光子学、光电子学和生物学应用中的重要组成部分。由于过渡金属元素激活的宽带近红外荧光粉已被广泛报道，通过引入具有4f-5d跃迁的稀土激活剂发现下一代材料存在挑战。在这里，我们报告了一个前所未有的荧光粉K3 LuSi 2 O 7：Eu 2+，给出了一个发射带中心在740 nm的全宽在460 nm的蓝光激发时，在160 nm的半峰。结合结构和光谱表征揭示了二价铕在LuO 6和K2 O 6多面体中具有小配位数的选择性占位，导致意外的近红外发射。所制备的磷光体转换发光二极管具有作为非可见光光源的巨大潜力。我们的工作提供了二价铕掺杂无机固态材料近红外发光的设计原则，并可能启发未来的研究，以进一步探索近红外发光二极管。
Near-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4f-5d transition. Here, we report an unprecedented phosphor K3LuSi2O7:Eu2+ that gives an emission band centered at 740 nm with a full-width at half maximum of 160 nm upon 460 nm blue light excitation. Combined structural and spectral characterizations reveal a selective site occupation of divalent europium in LuO6 and K2O6 polyhedrons with small coordination numbers, leading to the unexpected near infrared emission. The fabricated phosphor-converted light-emitting diodes have great potential as a non-visible light source. Our work provides the design principle of near infrared emission in divalent europium-doped inorganic solid-state materials and could inspire future studies to further explore nearinfrared light-emitting diodes.