Plasma–surface kinetics and simulation of feature profile evolution in Cl2+HBr etching of polysilicon
Plasma–surface kinetics and simulation of feature profile evolution in Cl2+HBr etching of polysilicon
复制标题
多晶硅 Cl2+HBr 蚀刻中的等离子体表面动力学和特征轮廓演化模拟
DOI：
10.1116/1.1517993
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
H. Sawin
中科院分区：
文献类型：
--
作者：
Weidong Jin;S. Vitale;H. Sawin
研究了低能Cl 2 +HBr等离子体束刻蚀多晶硅的工艺，测量了刻蚀产率与成分、离子入射能量和入射角的关系。HBr等离子体束的刻蚀产率略低于Cl 2等离子体束。由Cl 2和HBr束的角度依赖性的蚀刻产率强烈建议的离子诱导化学蚀刻的机制，具有最高的蚀刻产率在正常的入射角。对于Cl 2束，当离子的入射角增大到45°时，刻蚀产率基本保持不变;而对于HBr束，当离子的入射角增大到45°时，刻蚀产率开始下降。在不同的组成下，由Cl 2 +HBr等离子体的蚀刻产额的角度依赖性表现出与纯HBr相似的趋势。使用X射线光电子能谱，在Cl 2 +HBr等离子体蚀刻后的多晶硅表面上的Cl和Br的覆盖率进行了测量。纯Cl 2等离子体束刻蚀后的Cl覆盖率比纯Cl 2等离子体束刻蚀后的Br覆盖率高1.4倍。
The etching of polysilicon by low energy Cl2+HBr plasma beam was studied, and the etching yield as a function of composition, ion impingement energy and ion incident angle was measured. The etching yield by HBr plasma beam is slightly lower than Cl2 plasma beam. The angular dependence of etching yield by both Cl2 and HBr beam strongly suggests the mechanism of ion induced chemical etching, with highest etching yield at normal incident angle. For Cl2 beam, the etching yield almost keeps constant until the off-normal incident angle of ions increased to 45°, while for HBr beam, the etching yield starts dropping even with small off-normal angle. The angular dependence of etching yield by Cl2+HBr plasma at different composition exhibits similar trend as pure HBr. Using x-ray photoelectron spectroscopy, the coverage of Cl and Br on polysilicon surfaces after etching in Cl2+HBr plasmas was measured. The Cl coverage after etching with pure Cl2 plasma beam is about 1.4 times higher than the Br coverage after etchi...