Non-oscillatory antiferromagnetic coupling in sputtered Fe/Si superlattices
Non-oscillatory antiferromagnetic coupling in sputtered Fe/Si superlattices
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DOI：
10.1016/0304-8853(92)90084-2
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发表时间：
1992-12
影响因子：
2.7
通讯作者：
E. Fullerton;J. Mattson;S. Lee;C. H. Sowers;Y. Y. Huang-Y.;G. Felcher;S. Bader;F. Parker
中科院分区：
文献类型：
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作者：
E. Fullerton;J. Mattson;S. Lee;C. H. Sowers;Y. Y. Huang-Y.;G. Felcher;S. Bader;F. Parker
在x= 10-40埃的范围内生长了一系列溅射Fe（30埃）/Si（x）超晶格。磁化和克尔磁滞回线，和中子反射率测量确定反铁磁（AF）耦合的Fe层在室温下为x= 15 A的标称厚度，6千奥斯特的切换字段。X射线结构分析表明，对于x< 20 μ m，间隔介质是结晶的，而溅射的Si是非晶的（a）。对于较厚的Si层，未能检测到AF耦合中的振荡是由于a-Si的形成，而不是负责耦合的晶体硅化物。
A series of sputtered Fe (30 Å)/Si (x) superlattices were grown for x= 10–40 A ̊. Magnetization and Kerr hysteresis loops, and neutron-reflectivity measurements identify antiferromagnetic (AF) coupling of the Fe layers at room temperature for x= 15 A ̊ nominal thickness, with switching fields of 6 kOe. X-ray structural analyses indicate that the spacer medium is crystalline for x< 20 Å while sputtered Si is amorphous (a). Failure to detect oscillations in the AF coupling for thicker Si layers is due to the formation of a-Si, as opposed to the crystalline silicide responsible for the coupling.