Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi 1 − x Sb x
Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi 1 − x Sb x
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DOI：
10.1103/physrevb.82.121302
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发表时间：
2010-01
影响因子：
3.7
通讯作者：
A. Taskin;K. Segawa;Y. Ando
中科院分区：
文献类型：
--
作者：
A. Taskin;K. Segawa;Y. Ando
研究了二维(2D)表面态与三维(3D)体费米面(FS)共存的拓扑绝缘体Bi0.91 Sb0.09}中的角相关磁电阻和Shubnikov-de Haas振荡.在角度依赖关系中发现了两种不同类型的振荡现象：在低场观察到的振荡现象起源于(2\bar{1}\bar{1})平面上的表面态，这为区分2D表面态和3D FS提供了一种新的方法。另一个在较高磁场中变得突出的可能来自(111)面，显然起源未知，表明拓扑绝缘体的输运性质有新的物理意义。
The angular-dependent magnetoresistance and the Shubnikov-de Haas oscillations are studied in a topological insulator Bi_{0.91}Sb_{0.09}, where the two-dimensional (2D) surface states coexist with a three-dimensional (3D) bulk Fermi surface (FS). Two distinct types of oscillatory phenomena are discovered in the angular-dependence: The one observed at lower fields is shown to originate from the surface state, which resides on the (2\bar{1}\bar{1}) plane, giving a new way to distinguish the 2D surface state from the 3D FS. The other one, which becomes prominent at higher fields, probably comes from the (111) plane and is obviously of unknown origin, pointing to new physics in transport properties of topological insulators.