Selective removal of TCO stack layers for CdTe P1 process with a tailored pulse laser
Selective removal of TCO stack layers for CdTe P1 process with a tailored pulse laser
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使用定制脉冲激光器选择性去除 CdTe P1 工艺的 TCO 堆叠层
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
W. Sampath
中科院分区：
文献类型：
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作者：
M. Rekow;R. Murison;C. Dinkel;T. Panarello;S. Nikumb;W. Sampath
激光划片在 CdTe P1 划片步骤中的应用取得了巨大成功，并且行业内已建立了完善的标准工艺流程。特别是，P1 步骤的常见方法会导致钠钙玻璃基板暴露。反过来，Na 从玻璃扩散到薄膜中也不利于 CdTe 太阳能电池的性能 (1)。为了缓解这个问题，商业工艺在 CdTe 沉积后执行 P1 划线，然后用光致抗蚀剂回填所得凹槽。这种光刻胶应用工艺占 CdTe 模块生产线固定设备成本的很大一部分。在本文中，我们研究了波长、脉冲持续时间、时间脉冲形状和薄膜取向对 TEC10 玻璃上 SnO2 薄膜叠层去除动力学的影响。我们利用独特的脉冲可编程光纤激光器，旨在开发一种工艺，仅从 TCO 堆栈中去除 SnO2:F 导电层，而使下面的阻挡层完好无损。实现这一结果将允许在 CdTe 沉积之前甚至可能在玻璃制造时进行 P1 划线，从而完全消除对光刻胶步骤的需要。我们利用光学显微镜、白光轮廓测定法和电阻测量来表征所得过程。
Laser scribing has been used with great success for the CdTe P1 scribe step and a standard process sequence is well established in the industry. In particular, the common methodology for the P1 step results in exposure of the soda lime glass substrate. In turn, the Na diffusion from the glass into the film is detrimental to the performance of the CdTe solar cell (1). To mitigate this problem, commercial processes perform the P1 scribe after the CdTe deposition and the resulting groove is then backfilled with a photoresist. This photo-resist application process accounts for a significant fraction of the cost for the capital equipment in a CdTe module production line. In this paper we study the impact of wavelength, pulse duration, temporal pulse shape, and film orientation on the removal dynamics of the SnO2 film stack on TEC10 glass. We utilize a unique pulse-programmable fiber laser with the aim of developing a process that removes only SnO2:F conductive layer from the TCO stack, leaving the underlying barrier layers intact. Achieving this result would allow the P1 scribe to be performed before the CdTe deposition and perhaps even at the time of glass manufacture thereby completely eliminating the need for the photo-resist step. We utilize optical microscopy, white light profilometry, and resistance measurements to characterize the resulting process.