Structural characterization of Mn implanted AlInN
Structural characterization of Mn implanted AlInN
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DOI：
10.1088/0022-3727/41/11/115404
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发表时间：
2008-06
期刊：
影响因子：
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通讯作者：
A. Majid;Akbar Ali;J. Zhu;Y. Wang
中科院分区：
文献类型：
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作者：
A. Majid;Akbar Ali;J. Zhu;Y. Wang
AlInN/GaN 薄膜被注入 Mn 离子，随后在 750 和 850 °C 下等时退火。采用 X 射线衍射和卢瑟福背散射光谱 (RBS) 技术来研究注入/退火样品的微观结构特性。退火对薄膜中注入引起的应变的影响已被详细研究。发现应变随着剂量的增加而增加，直到达到饱和值，之后随着剂量的进一步增加而开始减少。 RBS 测量表明注入样品中 In、Al、Ga 和 Mn 的原子扩散。分别在 750 °C 和 850 °C 退火后观察到原子的向内和向外扩散。在 850 °C 退火时样品发生强烈分解。
AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 °C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 °C and 850 °C, respectively. Strong decomposition of the samples took place when annealed at 850 °C.