Crystal orientation-ordered ZnS nanowire bundles.
Crystal orientation-ordered ZnS nanowire bundles.
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DOI：
10.1021/ja0451057
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发表时间：
2004-10
影响因子：
15
通讯作者：
Daniel Moore;Yong Ding;Zhong Lin Wang
中科院分区：
文献类型：
--
作者：
Daniel Moore;Yong Ding;Zhong Lin Wang
我们报道了一种新的方法生长对齐和取向有序的ZnS纳米线。我们的方法依赖于生长在Si（111）衬底上的CdSe缓冲层，在该缓冲层上生长ZnS纳米线。给出了纳米线束的生长过程。该技术被证明是生长图案化、排列、尺寸控制和取向有序的ZnS纳米线的有效途径。
We report a novel approach for growing aligned and orientation-ordered ZnS nanowires. Our method relies on a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowire bundles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size-controlled, and orientation-ordered ZnS nanowires.