Infrared absorption study of zinc-doped silicon
Infrared absorption study of zinc-doped silicon
复制标题
掺锌硅的红外吸收研究
DOI：
10.1557/proc-163-15
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
E. Haller
中科院分区：
文献类型：
--
作者：
E. Merk;J. Heyman;E. Haller
We report high resolution infrared absorption spectra associated with the deep zinc acceptor in silicon. The optical transitions between ground and bound excited p-like'' states of the neutral helium-like double acceptor Zn{sup 0} center have been observed for the first time. The absorption cross section for the hole transition is found to be very small, of the order of 10{sup {minus}17} cm{sup 2}. Energy spacings of the P{sub 3/2} Rydberg series are very similar to the spacings of the group-III acceptors, suggesting that, in spite of the large ground state binding energy, effective mass approximation still applies to the bound excited states. This represents one more case where the strong central cell potential does not significantly disturb the neutral helium-like bound excited states. Similar observations have been made for the less deep neutral double acceptor Be, and for the chalcogens donors S, Se and Te. The optical ionization energy of Zn{sup 0/{minus}} has been determined to be 2575 cm{sup {minus}1} (319 MeV). Two additional sets of absorption lines related to zinc have been observed at 2130 cm{sup {minus}1} and 2758 cm{sup {minus}1}. Their origin will be discussed. 15 refs., 5 figs., 1 tab.
We report high resolution infrared absorption spectra associated with the deep zinc acceptor in silicon. The optical transitions between ground and bound excited p-like'' states of the neutral helium-like double acceptor Zn{sup 0} center have been observed for the first time. The absorption cross section for the hole transition is found to be very small, of the order of 10{sup {minus}17} cm{sup 2}. Energy spacings of the P{sub 3/2} Rydberg series are very similar to the spacings of the group-III acceptors, suggesting that, in spite of the large ground state binding energy, effective mass approximation still applies to the bound excited states. This represents one more case where the strong central cell potential does not significantly disturb the neutral helium-like bound excited states. Similar observations have been made for the less deep neutral double acceptor Be, and for the chalcogens donors S, Se and Te. The optical ionization energy of Zn{sup 0/{minus}} has been determined to be 2575 cm{sup {minus}1} (319 MeV). Two additional sets of absorption lines related to zinc have been observed at 2130 cm{sup {minus}1} and 2758 cm{sup {minus}1}. Their origin will be discussed. 15 refs., 5 figs., 1 tab.