Low inductance double-sided Metal-In-Gap nano composite slider using Fe-Ta-N magnetic film system for 250 Mb/in/sup 2/ recording
Low inductance double-sided Metal-In-Gap nano composite slider using Fe-Ta-N magnetic film system for 250 Mb/in/sup 2/ recording
复制标题
低电感双面 Metal-In-Gap 纳米复合滑块，采用 Fe-Ta-N 磁性薄膜系统，可实现 250 Mb/in/sup 2/ 记录
DOI：
10.1109/20.333940
复制
发表时间：
1994
影响因子：
2.1
通讯作者：
A. Iwama
中科院分区：
文献类型：
--
作者：
R. Goto;T. Kawai;M. Yamazaki;F. Tsuneda;S. Suwabe;I. Sakaguchi;A. Iwama
研究了一种双面金属间隙（DMIG）纳米复合材料滑块的一些特性，该滑块具有低电感结构、Fe-Ta-N型磁性薄膜和新的差距区几何构型。该磁头的电感约为1.0 nH/T/sup 2/。该磁头的电气性能已在1800 Oe介质的5.5 /spl mu/m磁道宽度和0.25 /spl mu/m间隙长度下进行了评估。在53 kFCI时，O/W小于-34 dB。在53 kFCI下，输出电压大于150 nVp-p/（μ m/s.turns）。这种性能被认为是有前途的250 Mb/in/sup 2/记录。>
We studied some characteristics of a double-sided Metal-In-Gap (DMIG) nano composite slider that has a low inductance structure, Fe-Ta-N type of magnetic film and new geometrical configuration of the gap area. The inductance of this head is approximately 1.0 nH/T/sup 2/. The electrical performance of this head has been evaluated with 5.5 /spl mu/m Track Width and 0.25 /spl mu/m Gap Length for 1800 Oe media. O/W is less than -34 dB at 53 kFCI. Output voltage is more than 150 nVp-p/(um.m/s.turns) at 53 kFCI. This performance is seen to be promising for 250 Mb/in/sup 2/ recording. >