Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
复制标题
电子回旋共振等离子体增强化学气相沉积掺铒硅氧薄膜室温 1.54 μm Er3+ 发光的成分依赖性
DOI：
10.1063/1.120974
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发表时间：
1998
影响因子：
4
通讯作者：
Choochon Lee
中科院分区：
文献类型：
--
作者：
J. Shin;Mun;S. Seo;Choochon Lee
研究了用电子回旋共振等离子体增强化学气相淀积SiH 4和O2同时溅射铒的方法制备的掺铒硅氧薄膜的室温1.54 μ mEr ~（3+）光致发光随组分的变化关系。Si：O比从3：1变化到1：2，并且退火温度从500变化到900 °C。在900 °C退火并形成嵌入SiO2基质中的硅纳米团簇后，在Si：O比为1：1.2的样品中观察到最强烈的Er 3+发光。高活性铒部分，通过载流子的有效激发，和高发光效率，由于高品质的SiO2基质被确定为产生强烈的Er 3+发光的关键因素。
The composition dependence of room temperature 1.54 μm Er3+ photoluminescence of erbium-doped silicon:oxygen thin films produced by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with a Si:O ratio of 1:1.2 after a 900 °C anneal and the formation of silicon nanoclusters embedded in the SiO2 matrix. The high active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to the high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.