Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory
Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory
复制标题
对商用磁阻随机存取存储器的磁场攻击研究
DOI：
10.1109/isqed.2017.7918309
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Swaroop Ghosh
中科院分区：
文献类型：
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作者：
A. Holst;Jaedong Jang;Swaroop Ghosh
在这项工作中，我们使用基于现场可编程门阵列(现场可编程门阵列)的存储器测试装置来研究磁阻随机存取存储器(MRAM)对外部磁场干扰的敏感性。我们使用稀土磁场源来比较在存储器读、写和保持过程中由于磁场强度和取向的增加而引起的瞬时位错误响应和残留位错误响应。结果表明，MRAM的暂态和残余误差响应与外加电场强度成正比。此外，MRAM在读干扰期间表现出抗扰性，并且在写周期磁干扰期间更容易受到破坏性误差的影响。
In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.