Sm-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 Sputter-Epitaxy on Si Towards Giant-Piezoelectric Thin Film for Mems
Sm-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 Sputter-Epitaxy on Si Towards Giant-Piezoelectric Thin Film for Mems
复制标题
用于MEMS的Sm掺杂Pb(Mg1/3, Nb2/3)O3-PbTiO3溅射外延硅薄膜
DOI：
10.1109/mems51782.2021.9375393
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Tanaka Shuji
中科院分区：
文献类型：
--
作者：
Qi Xuanmeng;Yoshida Shinya;Tanaka Shuji
Pb(Zr, Ti)O3（PZT）是压电微电子机械系统（MEMS）驱动器中应用最广泛的材料。然而，近年来对其压电性的改进已趋于饱和。因此，我们开发了sm掺杂Pb(Mg1/3, Nb2/3)O3-PbTiO3（Sm-PMN-PT）外延薄膜，作为PZT之外的下一代压电薄膜。在本研究中，使用外延PZT缓冲层，成功地在Si衬底上溅射沉积了具有纯钙钛矿相的(001)/(100)取向Sm-PMN-PT。厚度为1.5 gm的Sm-PMN-PT/PZT堆叠膜的横向压电系数|e31，f|大于20 C/m2，相当于或优于最佳级PZT薄膜。从这一结果可以看出，PZT缓冲层的影响没有被埋没，估计出鞋底Sm-PMN-PT薄膜的|e31，f|大于26 C/m2。这一结果表明外延Sm-PMN-PT在高性能压电mems中具有潜力。
Pb(Zr, Ti)O3(PZT) has been the most widely utilized in piezoelectric Micro Electro Mechanical Systems (MEMS) actuator. However, the improvement of its piezoelectricity has been saturated recently. Thus, we have developed Sm-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3(Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film beyond PZT. In this study, a (001)/(100)-oriented Sm-PMN-PT with the pure perovskite phase was successfully sputter-deposited on a Si substrate using an epitaxial PZT buffer layer. The transverse piezoelectric coefficient, |e31,f|, of a 1.5-gm-thick Sm-PMN-PT/PZT stack film measured over 20 C/m2, which is equivalent to or better than those of the best class PZT thin films. From this result, the influence of the PZT buffer layer was deembedded, and |e31,f| of the sole Sm-PMN-PT thin film was estimated at higher than 26 C/m2. This result suggests a potential of epitaxial Sm-PMN-PT for high-performance piezo-MEMS.