Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics
Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics
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Sn催化合成SnO2纳米线及其光电特性
DOI：
10.1088/0957-4484/22/48/485701
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发表时间：
2011-12-02
期刊：
影响因子：
3.5
通讯作者：
Jie, Jian-sheng
中科院分区：
文献类型：
--
作者：
Luo, Lin-bao;Liang, Feng-xia;Jie, Jian-sheng
本文报道了通过Sn催化气液固（VLS）生长机制合理合成一维SnO2纳米线（SnO(2)NWs），其中Sn纳米颗粒可以在高温下指导SnO(2)NWs的定向生长。由单个SnO(2)NWs组成的场效应晶体管的I-V测量显示出典型的n型半导体特性，电子迁移率和浓度分别为14.36 cm(2) v - 1s（-1）和1.145 x 10(17) cm（-3）。基于sno2nw的光电探测器对紫外光辐射具有较高的灵敏度，具有毫秒级上升/下降时间的快速光响应速度，具有良好的稳定性和重现性，而对可见光范围内的照明几乎是盲的。提出了解释检测选择性和快速响应速度的详细原因。上述结果的通用性表明，我们的SnO2NW光电探测器在纳米级光电器件中具有潜在的应用前景。
We report the rational synthesis of one-dimensional SnO2 nanowires (SnO(2)NWs) via a Sn-catalyzed vapor-liquid-solid (VLS) growth mechanism, in which Sn nanoparticles can direct the oriented growth of SnO(2)NWs at high temperature. I-V measurement of a field effect transistor made of individual SnO(2)NWs exhibits typical n-type semiconducting characteristics with an electron mobility and concentration of 14.36 cm(2) V-1 s(-1) and 1.145 x 10(17) cm(-3), respectively. The SnO2NW-based photodetector shows a high sensitivity to UV light radiation, and a fast light response speed of millisecond rise time/fall time with excellent stability and reproducibility, whereas it is nearly blind to illumination with wavelengths in the visible range. Detailed reasons to account for the detection selectivity and rapid response speed are proposed. The generality of the above results suggests that our SnO2NW photodetectors have potential application in nanoscaled optoelectronic devices.