Tuning Local Conductance to Enable Demonstrator Ferroelectric Domain Wall Diodes and Logic Gates
Tuning Local Conductance to Enable Demonstrator Ferroelectric Domain Wall Diodes and Logic Gates
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DOI：
10.1002/apxr.202200095
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发表时间：
2023-05-01
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影响因子：
--
通讯作者：
Gregg, John Marty
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文献类型：
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作者：
Suna, Ahmet;McCluskey, Conor Joseph;Gregg, John Marty
从根本上说，锂离子电池是一种良好的电绝缘体。然而，当存在180度畴壁时，这可以显著改变，因为它们通常被发现是强导电的。电导率取决于壁相对于极化轴的倾斜角度，因此，如果这些角度可以改变，则可以调节或切换导通和关断。在大约500 nm厚的z切离子切片薄膜中，局部壁角变化可以通过施加的电偏压的感测和幅度来控制。它示出，这将导致在二极管样的行为，允许在适度的频率半波整流。重要的是，它是实验证明，这些畴壁二极管可以用来构建“与”和包容性的“或”逻辑门，其中“0”和“1”的输出状态是明确区分。外推到更复杂的安排表明，输出状态仍然可以区分两级级联逻辑。洞察力表明，简单的逻辑电路可以实现局域化操纵畴壁电导率。我们的研究补充了Jie Sun等人（Adv. Funct. Mater. 2207418（2022）），其中NOT、NOR和NAND门通过移动导电畴壁以形成或断开电接触来实现。在薄膜锂酸盐电容器中，发现畴壁倾斜的局部偏压诱导的变化（以及极性不连续性的相关变化）诱导强的二极管状电流-电压特性。因此，畴壁整流器，以及“或”和“与”逻辑门，成功地证明和建模是有效的，即使在两级级联逻辑。图像
Fundamentally, lithium niobate is a good electrical insulator. However, this can change dramatically when 180 degrees domain walls are present, as they are often found to be strongly conducting. Conductivities depend on the inclination angles of walls with respect to the polarization axis and so, if these angles can be altered, then electrical conduction can be tuned, or toggled on and off. In approximate to 500 nm thick z-cut ion-sliced thin films, localized wall angle variations can be controlled by both the sense and magnitude of applied electrical bias. It is shown that this results in diode-like behaviour, allowing half-wave rectification at modest frequencies. Importantly, it is experimentally demonstrated that these domain wall diodes can be used to construct "AND" and inclusive "OR" logic gates, where "0" and "1" output states are clearly distinguishable. Extrapolation to more complex arrangements shows that output states can still be distinguished in two-level cascade logic. Insights show that simple logic circuits can be realized by localized manipulation of domain wall conductivity. Our research complements that by Jie Sun et al. (Adv. Funct. Mater. 2207418 (2022)), where NOT, NOR, and NAND gates are realized by moving conducting domain walls to make or break electrical contacts.In thin film lithium niobate capacitors, localized bias-induced changes in domain wall tilt (and associated changes in polar discontinuities) are found to induce strong diode-like current-voltage characteristics. As a result, domain wall rectifiers, as well as "OR" and "AND" logic gates, are successfully demonstrated and modeled to be effective, even in two-level cascade logic. image