Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures
Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures
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InGaN/GaN 量子阱结构中载流子重新分布过程的动力学
DOI：
10.1002/pssc.201300481
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Badcock T
中科院分区：
文献类型：
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作者：
Badcock T
我们研究了InGaN/GaN多量子阱中载流子动力学在10 K和100 K之间的复合能量的函数。在发光光谱的高能侧检测到的发射，在10 ~ 50 K之间，发光强度和衰减时间明显减小。相反，对于在光谱的低能量侧检测到的发射，这两个量在相同的温度范围内都增加。我们将这种行为归因于载流子通过局域态之间的能量损失跳变而进行的热激活再分配。根据浅态和深态各自的衰减时间尺度变化，推断出平均能量损失跳变时间随着局域化能量深度的增加而增加，因此与局域化态高斯或指数密度下的空间不相关局域化一致。在较高的激发密度下，由于局域状态的饱和，这种行为被抑制。（©2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
We have studied the carrier dynamics in an InGaN/GaN multiple quantum well as a function of recombination energy between temperatures of 10 K and 100 K. For emission detected on the high energy side of the luminescence spectrum, the luminescence intensity and its decay time decrease strongly between 10 K and 50 K. In contrast, for emission detected on the low energy side of the spectrum, both of these quantities increase over the same temperature range. We attribute this behaviour to the thermally activated redistribution of carriers via energy‐loss hopping between localised states. On the basis of the respective changes in decay timescales for shallow and deep states, the average energy‐loss hopping times are inferred to increase with increasing energy depth of localisation and are thus consistent with spatially uncorrelated localisation within a Gaussian or exponential density of localised states. Under higher excitation densities this behaviour is suppressed due to the onset of saturation of the localised states. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)