A CMOS SPAD Sensor With a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-Fast Optical Transient Capture
A CMOS SPAD Sensor With a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-Fast Optical Transient Capture
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DOI：
10.1109/jsen.2018.2803087
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发表时间：
2018-04
影响因子：
4.3
通讯作者：
Tarek Al Abbas;N. Dutton;Oscar Almer;N. Finlayson;Francescopaolo Mattioli Della Rocca;R. Henderson
中科院分区：
文献类型：
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作者：
Tarek Al Abbas;N. Dutton;Oscar Almer;N. Finlayson;Francescopaolo Mattioli Della Rocca;R. Henderson
采用130 nm CMOS成像技术的数字硅光电倍增管实现了时间相关单光子计数，其数量级超过了传统的堆积限制。该传感器包括一个$32 \times 32\，\，43 $ %填充因子的单光子雪崩二极管阵列，具有工作在10 GS/s的多事件折叠闪光时间-数字转换器架构。生成264个bin $\times 16 $ bit直方图，并以最大188 kHz从芯片中读取，从而实现快速时间分辨扫描或超快低光事件捕获。完整的光学和电学特性的结果。
A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a $32 \times 32\,\,43$ % fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins $\times16$ bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.