Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
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DOI：
10.1109/ted.2019.2896156
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发表时间：
2019-04-01
影响因子：
3.1
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
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作者：
Chandrasekar, Hareesh;Uren, Michael J.;Kuball, Martin
固有的限制，以温度dependentsub-strate损失的GaN-on-Si技术，由于衬底的电阻率随温度的变化，使用实验验证的器件模拟框架进行评估。室温衬底电阻率对温度依赖的共面波导（CPW）线损耗在不同的工作频带的影响。CPW线GaN上的高电阻率硅显示有一个显着的温度依赖性的温度高于150摄氏度，并具有较低的衬底损耗的频率以上的X波段。另一方面，GaN上的低电阻率硅被证明是更温度不敏感，并具有较低的衬底损耗甚至比高电阻硅较低的工作频率。各种共面波导的几何形状对衬底损耗的影响也概括的讨论。这些结果预计将作为一个基准的温度依赖性衬底损耗在硅基氮化镓射频技术。
Intrinsic limits to temperature-dependentsub-strate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent coplanar waveguide (CPW) line loss at various operating frequency bands is then presented. CPW lines for GaN-on-high-resistivity Si are shown to have a pronounced temperature dependence for temperatures above 150 degrees C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low-resistivity Si is shown to be more temperature insensitive and has lower substrate losses than even highly resistive Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature-dependent substrate loss in GaN-on-Si RF technology.