Effects of diameter reduction on the optical properties of InGaN/GaN nanodisks for quantum photonics applications
Effects of diameter reduction on the optical properties of InGaN/GaN nanodisks for quantum photonics applications
复制标题
直径减小对量子光子学应用中 InGaN/GaN 纳米盘光学性能的影响
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
H. Deng
中科院分区：
文献类型：
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作者：
Lei Zhang;L. Lee;Chu;T. Hill;P. Ku;H. Deng
我们显示了超过100倍的增强激子振荡器的强度作为GaN纳米柱中的InGaN纳米盘的直径从几微米减少到小于40 nm，对应于量子点的限制。增强的结果从显着的应变松弛在直径小于100 nm的纳米盘。同时，辐射衰减率仅提高了10倍，由于在小纳米盘的光子态的局域密度的强烈减少。辐射衰减率的进一步增加可以通过设计光子态的局部密度来实现，例如添加介电涂层。
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.