Interlayer coupling-induced controllable negative differential thermal resistance in graphene/h-BN van der Waals heterostructure

Interlayer coupling-induced controllable negative differential thermal resistance in graphene/h-BN van der Waals heterostructure
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石墨烯/h-BN范德华异质结构中层间耦合引起的可控负微分热阻

DOI:
10.1063/5.0103901
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发表时间:
2022-10
影响因子:
4
通讯作者:
Liu Jun
Liu Jun
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Chen Xue-Kun;Tan Jia-Ling;Pang Min;Xie Zhong-Xiang;Zhou Wu-Xing;Liu Jun

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使用石墨烯和六方氮化硼(h-BN)的范德华(VDW)异质结作为一种典型的二维器件系统已经出现,例如原子薄的晶体管或电容器。在这里,我们用非平衡分子动力学模拟方法研究了这种VDW异质结中的非线性热输运。结果表明,在较小的温度偏置下,随着层间耦合作用的增强,薄膜出现明显的负差分热阻现象。振动谱分析表明,层间耦合引起的声子过滤机制严重阻碍了界面热输运。为了获得最佳条件,考虑了系统长度、横向宽度、外部温度和缺陷密度对NDTR值的依赖关系。我们的发现将声子过滤机制扩展到热信息处理。
The van der Waals (vdW) heterostructures employing graphene and hexagonal boron nitride (h-BN) have emerged as a typical system for building emergent two-dimensional devices, such as atomically thin transistors or capacitors. Herein, we study the nonlinear thermal transport in such vdW heterostructure by non-equilibrium molecular dynamics simulations. The results show that an obvious negative differential thermal resistance (NDTR) phenomenon can be observed under small temperature bias when the interlayer coupling becomes stronger. The vibrational spectra analysis manifests that the phonon filtering mechanism induced by interlayer coupling greatly hinders the interfacial thermal transport. To obtain the optimum conditions, the dependence of NDTR on the system length, lateral width, external temperature, and defect density is taken into account. Our findings extend the phonon filtering mechanism to thermal information processing.
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