Formation conditions for electron internal transport barriers in JT-60U plasmas
Formation conditions for electron internal transport barriers in JT-60U plasmas
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DOI：
10.1088/0741-3335/46/5a/003
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发表时间：
2004-05
影响因子：
2.2
通讯作者：
T. Fujita;T. Fukuda;Y. Sakamoto;S. Ide;T. Suzuki;H. Takenaga;K. Ida;H. Idei;T. Shimozuma;A. Fujisawa;S. Ohdachi;K. Toi
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文献类型：
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作者：
T. Fujita;T. Fukuda;Y. Sakamoto;S. Ide;T. Suzuki;H. Takenaga;K. Ida;H. Idei;T. Shimozuma;A. Fujisawa;S. Ohdachi;K. Toi
用电子回旋加速器（EC）加热JT-60 U中性束（NB）功率扫描的正剪切（PS）和反剪切（RS）等离子体，研究了电子内输运势垒（ITB）的形成。没有或低的NB功率值和一个小的径向电场（Er）梯度，一个强大的，盒型电子ITB形成在RS等离子体中，而没有强电子ITB的峰值曲线在PS等离子体中观察到可用的EC功率内。当NB功率和Er梯度增加时，RS等离子体中EC加热的强电子ITBs中的电子输运不受影响，而电子热扩散率随着离子热扩散率的降低而降低，PS等离子体中形成强电子和离子ITBs。
The formation of electron internal transport barriers (ITBs) was studied using electron cyclotron (EC) heating in JT-60U positive shear (PS) and reversed shear (RS) plasmas with scan of neutral beam (NB) power. With no or low values of NB power and with a small radial electric field (Er) gradient, a strong, box-type electron ITB was formed in RS plasmas while a peaked profile with no strong electron ITBs was observed in PS plasmas within the available EC power. When the NB power and the Er gradient were increased, the electron transport in strong electron ITBs with EC heating in RS plasmas was not affected, while electron thermal diffusivity was reduced in conjunction with the reduction of ion thermal diffusivity, and strong electron and ion ITBs were formed in PS plasmas.