Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)
Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)
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皮秒应变脉冲对铁磁半导体 (Ga,Mn)(As,P) 薄层的影响
DOI：
10.1103/physrevb.82.104422
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发表时间：
2010
影响因子：
3.7
通讯作者：
B. Perrin
中科院分区：
文献类型：
--
作者：
L. Thevenard;E. Péronne;C. Gourdon;C. Testelin;M. Cubukcu;E. Charron;S. Vincent;A. Lemaître;B. Perrin
利用磁光克尔效应（MOKE）研究了皮秒声应变脉冲（ps-ASP）对磷共掺（Ga，Mn）As薄膜的影响。一个短暂的MOKE信号，其次是低振幅振荡被证明，与施加的磁场，温度和ps-ASP振幅的强烈依赖。仔细的干涉测量层的厚度变化引起的ps-ASP使我们能够非常准确地模拟产生的信号，并解释为应变调制反射率（不同的${\ensuremath{\sigma}}_{\ifmmode\pm\else\textpm\fi{}}$探测极化），独立于动态磁化效应。
The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As codoped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low-amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature, and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for ${\ensuremath{\sigma}}_{\ifmmode\pm\else\textpm\fi{}}$ probe polarizations), independently from dynamic magnetization effects.