6.5 kV-modules using IGBTs with field stop technology

6.5 kV-modules using IGBTs with field stop technology
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使用采用场截止技术的 IGBT 的 6.5 kV 模块

DOI：
10.1109/ispsd.2001.934571
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发表时间：
2001
期刊：
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
影响因子：
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通讯作者：
Oliver Schilling
Oliver Schilling
中科院分区：
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文献类型：
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作者：
Josef Bauer;F. Auerbach;A. Porst;R. Roth;H. Ruething;Oliver Schilling

文献摘要

被引文献

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介绍了一种新型的6.5KV场停IGBT/二极管芯片组，该芯片组具有较大的安全工作区域，适用于600A模块应用。针对低导通电压和低短路电流，对IGBT单元设计和垂直场停止结构进行了优化。在4.4kV线电压和125/spl deg/C温度下，实验验证了该器件的通断和短路耐用性。在双倍额定电流下验证了关断行为。
A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125/spl deg/C temperature. The turn off behavior is verified at the twofold nominal current.