Compact Silicon-on-Insulator Dual-Microring Resonator Optimized for Sensing
Compact Silicon-on-Insulator Dual-Microring Resonator Optimized for Sensing
复制标题
针对传感进行优化的紧凑型绝缘体上硅双微环谐振器
DOI：
10.1109/jlt.2011.2138678
复制
发表时间：
2011-05-15
影响因子：
4.7
通讯作者：
Chen, Hongda
中科院分区：
文献类型：
--
作者：
Su, Baoqing;Wang, Chunxia;Chen, Hongda
我们提出了一种新型的硅绝缘体双微波谐振器的传感应用。数值分析表明，双微波谐振腔的Q值比传统的无耗波导单环谐振腔的Q值高3个数量级，从而大大提高了传感器的分辨率和最低检测水平。对于内环谐振峰，在弱耦合条件下，当传感面积小于50 × 50 μm2时，理论Q值达到1.07 × 107。体折射率传感器的折射率变化检测限可达3.85 × 10-6。此外，通过增大外圈的弯曲半径，可以进一步提高Q因子。导出了输出频谱响应的解析表达式。此外，对于低损耗波导，还得到了两个环形波导和两个总线波导的临界耦合条件，这对传感器器件的优化设计是必要的。
We demonstrate a novel silicon-on-insulator dual-microring resonator for sensing application. Numerical analysis shows that the Q factor of dual-microring resonator is three orders of magnitude higher than that of conventional single-ring resonator with lossless waveguide and thereby as a sensor, the resolution and minimum level of detection is enhanced greatly. For the resonance peak of inner ring, a Q value of 1.07 × 107 is achieved theoretically in weak coupling conditions while the sensing area is kept below 50 × 50 μm2. Detection limit of refractive index change of 3.85 × 10-6 can be achieved for bulk refractive index sensing. Moreover, by enlarging bending radius of the outer ring, Q factor can be further improved. The analytical description of output spectrum response is derived. In addition, for low propagation loss waveguide, critical coupling condition of two rings and bus waveguides is obtained and it's essential for sensor device optimization.