Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping
Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping
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通过电掺杂改进应变局域 GaSe 单光子发射器
DOI：
10.1021/acs.nanolett.3c02308
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发表时间：
2023
期刊：
影响因子：
10.8
通讯作者：
Ling, Xi
中科院分区：
文献类型：
--
作者：
Luo, Weijun;Puretzky, Alexander;Lawrie, Benjamin;Tan, Qishuo;Gao, Hongze;Swan, Anna K.;Liang, Liangbo;Ling, Xi
通过纳米级应变的激子局域化已被用于在2D材料中创建高效的单光子发射器（SPE）。然而，激子之间的强库仑相互作用可通过激子-激子湮灭导致非辐射复合，从而对SPE性能产生负面影响。在这里，我们调查库仑相互作用的亮度，单光子纯度和工作温度的应变局域化的GaSe单光子发射器，通过使用静电掺杂的效果。通过将GaSe选通到电荷中性点，激子-激子湮灭非辐射途径被抑制，导致发射强度提高了约60%，单光子纯度g（2）（0）从0.55提高到0.28。工作温度也相应地从4.5K提高到85 K。这项研究提供了洞察多体相互作用的激子限制在纳米级的应变和奠定了基础，优化的SPE的光电子学和量子光子学。
Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton–exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton–exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purityg(2)(0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. This research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.