Influence of Cu/(Ge+Sn) composition ratio on photovoltaic performances of Cu2Sn1−xGexS3 solar cell
Influence of Cu/(Ge+Sn) composition ratio on photovoltaic performances of Cu2Sn1−xGexS3 solar cell
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Cu/(Ge+Sn)组成比对Cu2Sn1−xGexS3太阳能电池光伏性能的影响
DOI：
10.1016/j.solener.2017.04.025
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发表时间：
2017
期刊：
影响因子：
6.7
通讯作者：
T. Minemoto
中科院分区：
文献类型：
--
作者：
Kazuki Hamamura;Jakapan Chantana;Koichi Suzuki;T. Minemoto
研究了Cu2Sn1-−xGexS3(CTGs，x=0.00-0.07)薄膜的Cu/(Ge+SnO)组成比对其物理性能和光伏性能的影响。CTGS薄膜是通过溅射沉积Cu/SnS2堆积前驱体，然后在S和GeS2蒸气中在550℃下氮气中硫化1h制备而成的。通过改变铜前驱体厚度，可以改变铜/(Ge+Sn2+)的比值。结果表明，在所制备的CTGS薄膜中形成了GES第二相，其Cu/(Ge+Sn4)比小于1.72，而Cu4SnS4第二相的生成比大于1.83。当Cu/(Ge+Sn值)在1.72~1.83范围内时，可以得到单相的块状CTGS薄膜。此外，还制备了不同铜/(Ge+Sn2)比的CTGS太阳电池。结果表明，在优化的铜/(Ge+Sn2+)比为1.83的条件下，获得了效率为3.77%的CTGS太阳电池。开路电压的增加归因于单相CTGS薄膜，从而降低了载流子复合，而短路电流密度的提高可能是由于CTGS吸收体载流子密度的降低所致。
Impact of Cu/(Ge + Sn) composition ratio of Cu2Sn1−xGexS3(CTGS, x = 0.00–0.07) films on their physical properties and photovoltaic performances is investigated. The CTGS thin films are fabricated by sputtering depositions of Cu/SnS2stacked precursors and then the sulfurization in S and GeS2vapors under 550 °C for 1 h in N2flow. The Cu/(Ge + Sn) ratio is varied by changing Cu precursor thickness. It is revealed that GeS secondary phase is formed in the resulting CTGS films with the Cu/(Ge + Sn) ratios below 1.72, while Cu4SnS4secondary phase is detected with the Cu/(Ge + Sn) ratios above 1.83. The single phase in bulk of CTGS films are attained with the Cu/(Ge + Sn) ratios in the range of 1.72–1.83. In addition, CTGS solar cells with different Cu/(Ge + Sn) ratios are fabricated. As a result, a 3.77%-efficient CTGS solar cell is obtained with the optimized Cu/(Ge + Sn) ratio of 1.83. An increased open-circuit voltage is attributed to the single phase CTGS film, thus decreasing the carrier recombination, and the enhanced short-circuit current density is feasibly caused by the decrease in carrier density of CTGS absorber.