Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer
Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer
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DOI：
10.1063/1.3579997
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发表时间：
2011-05-01
影响因子：
3.2
通讯作者：
van Wees, Bart J.
中科院分区：
文献类型：
--
作者：
Tombros, Nikolaos;Veligura, Alina;van Wees, Bart J.
最近在高迁移率悬浮石墨烯器件中观察到的分数量子霍尔效应为石墨烯物理学引入了一个新的方向，即电子-电子相互作用动力学领域。然而，目前用于制造这种高迁移率器件的技术具有几个缺点。最重要的是，可用于电子器件的接触材料仅限于几种金属（Au、Pd、Pt、Cr和Nb），因为只有这些金属不受反应性酸蚀刻制造步骤的侵蚀。在这里，我们展示了一种新技术，可以产生机械稳定的悬浮高迁移率石墨烯器件，并且几乎与任何类型的接触材料兼容。在聚二甲基戊二酰亚胺基有机抗蚀剂上制备的石墨烯器件在77 K下电子载流子密度n = 5.0 × 10（9）cm（-2）时显示出高达600.000 cm（2）/Vs的迁移率。这项技术为基于复杂悬浮石墨烯的自旋电子、超导和其他类型的设备铺平了道路。(C)2011年美国物理学会。[doi：10.1063/1.3579997]
The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobility graphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm(2)/Vs at an electron carrier density of n = 5.0 x 10(9) cm(-2) at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579997]